金属氧化层半导体场效应晶体管


MOSFET(金属氧化层半导体场效应晶体管)
Part
Number
Mode
VDS(Max)
VGS
ID(Max)
RDS(on)
Application
Package
MEM2300-N
N channel
20V
12V
5.2A
37mΩ
①②③④⑤⑥⑦⑧
SOT23
MEM2301
P channel
-20V
-8V
-2.8A
93mΩ
①②③④⑤
SOT23/SOT23-3
MEM2301-N
P channel
-20V
-12V
-3.1A
77mΩ
①②③④⑤
SOT23
MEM2303
P channel
-30V
-12V
-4.2A
55mΩ
①②③④⑤⑥⑦⑧
SOT23/SOT23-3
MEM2303-N
P channel
-30V
-20V
-2.9A
92mΩ
①②③④⑤⑥⑦⑧
SOT23
MEM2307
P channel
-30V
-20V
-4.1A
46mΩ
①②③④⑤⑥⑦⑧
SOT23/SOT23-3
MEM2309
P channel
-30V
-20V
-6A
46mΩ
①②③④⑤⑥⑦⑨
SOP8/SOT89-3
MEM2311
Double P
-30V
-20V
-6A
53mΩ
①②③④⑤⑥⑦⑧
SOP8
MEM2313
Double P
-30V
-20V
-6A
46mΩ
①②③④⑤⑥⑦⑧
SOP8
MEM2302
N channel
20V
8V
3A
22mΩ
①②③④⑤⑥⑦⑧
SOT23/SOT23-3
MEM2302-N
N channel
20V
12V
5.2A
29mΩ
①②③④⑤⑥⑦⑧
SOT23
MEM2306
Double N
20V
12V
6A
22mΩ
①②③④⑤⑥⑦⑧
SOP8
MEM2310
N channel
30V
12V
5.8A
25mΩ
①②③④⑤⑥⑦⑧
SOT23/SOT23-3
MEM2310-N
N channel
30V
20V
4.4A
35mΩ
①②③④⑤⑥⑦⑧
SOT23
MEM8205
Double N
20V
12V
6A
21mΩ
①②③④⑤
SOT23-6/ TSSOP8
MEM2318
Double N
20V
12V
5A
19mΩ
①②③④⑤⑥⑦⑧
TSSOP8/SOT23-6
Applications ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection
HV-MOSFET(高压MOS)
Part Number
Mode
VDS(MIN)
VGS
ID(Max)
RDS(on) Max(Ω)
Crss
(pF)
Qg(nC)
Package
MEM1N60
N channel
600V
 
±30V
1A
9.3
15
5
TO92/TO126/TO251
MEM2N60
N channel
±30V
2A
4.7
16
9
TO126/TO251/TO252/ TO220F
MEM4N60
N channel
±30V
4A
2.6
20
18
TO251/TO252/TO220F
MEM7N60
N channel
±30V
6.9A
1.4
23
27
TO220F
MEM8N60
N channel
±30V
7.5A
1.2
24
29
TO220F
MEM10N60
N channel
±30V
10A
0.8
26
45
TO220F
MEM12N60
N channel
±30V
12A
0.7
30
50
TO220F
MEM1N65
N channel
650V
 
±30V
1A
11
15
5
TO126/TO251/TO252/ TO220F
MEM2N65
N channel
±30V
2A
5.1
17
9
TO251/TO252/TO220F
MEM4N65
N channel
±30V
4A
2.9
20
19
TO220F
MEM8N65
N channel
±30V
7.5A
1.6
24
27
TO220F
MEM10N65
N channel
±30V
10A
0.85
27
48
TO220F
MEM12N65
N channel
±30V
12A
0.75
31
52
TO220F





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